Trion Minilock-Phantom III
Reactive Ion Etching (RIE) System
The Trion Minilock Phantom III RIE system is a plasma etch system with state-of-art plasma etch capability for single wafers, dies or parts. Accommodating up to six process gases (CF4, SF6, O2, Ar, Cl2, BCl3, ), this system can be used for anisotropic dry etching of films such as silicon oxide, silicon nitride, polysilicon, aluminum, GaAs and many others. This reactor can also be used to strip photoresist and other organic materials. The system is equipped with a load lock that increases user safety by preventing contact with the process chamber and any residual etch by-products. The load lock also allows the chamber to remain permanently under vacuum thereby keeping out moisture and keeping the reaction chamber free of possible corrosion.
Equipment Specifications
- Plasma source: ICP and RIE
- Max RF power: 600 W
- Working Gas: CF4, SF6, O2, Ar, Cl2, BCl3
- Max wafer size: 12 inch (300 mm)
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Oxford PlasmaPro 100
Deep RIE System
Deep reactive-ion etching (DRIE) is a newly developed technique for high aspect-ratio etching applications such as creating deep penetration, steep-sided holes and trenches in wafers/substrates, which requires smooth side wall at high etching rate. The PlasmaPro System can satisfy this requirement because its unique design makes it possible to run both Bosch™ and Cryo etch technologies in the same chamber. Bosch™ process provides high etch rate while Cryo etch technique ensures the smooth side wall.
Equipment Specification
- Max RF power: 2500W-ICP; 600W-RIE
- Working Gas: CF4, C4F8, CHF3, SF6, O2, Ar
- Max wafer size: 4 inch (100 mm)
- Low temperature silicon etching (Cryogenic process)
- Anisotropic etching of silicon and silicon oxide (Bosch process)
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Intlvac Nanoquest-I
Ion Beam Etching and Milling System
This is a versatile R&D ion beam development platform for both thin film milling and deposition. It works on almost all known solid materials. It also includes eight magnetron sputtering guns for magnetic material disposition and a Secondary Ion Mass Spectrometry (SIMS) probe subsystem for precise etch. The “SIMS” probe allows users to define etch end point and mount of over etch provides the required levels of sensitivity of end point detection.
Equipment Specification
- Base vacuum: 8 x 10-9 Torr
- Ion beam energy: 100-1200 eV
- Two gridded ion sources: 4 and 14cm
- Three 100mm targets for ion beam sputtering
- 8 magnetron sputtering
- SIMS endpoint detector
- Maximum wafer size: 4 inches (100 mm)
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